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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN 2N6515 2N6517 PNP 2N6519 2N6520 Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 - 55 to +150 mAdc mAdc mW mW/C Watts mW/C C 1 2 3 2N6515 250 250 2N6519 300 300 2N6517 2N6520 350 350 Unit Vdc Vdc Vdc PD CASE 29-04, STYLE 1 TO-92 (TO-226AA) TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 6.0 5.0 -- -- 250 300 350 -- -- -- Vdc 250 300 350 -- -- -- Vdc Vdc Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter - Base Breakdown Voltage (IE = 10 Adc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6519 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6519, 2N6520 -- -- 50 50 -- -- -- 50 50 50 nAdc nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 VCE(sat) -- -- -- -- VBE(sat) -- -- -- VBE(on) -- 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 -- -- -- -- -- -- 300 270 200 220 200 200 -- -- -- Vdc -- (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6519, 2N6520 fT Ccb Ceb -- -- 80 100 40 -- 200 6.0 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff -- -- 200 3.5 s s 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515 200 VCE = 10 V 200 TJ = 125C hFE, DC CURRENT GAIN VCE = -10 V PNP 2N6519 TJ = 125C 25C hFE, DC CURRENT GAIN 100 70 25C 100 70 50 - 55C - 55C 50 30 20 1.0 30 20 -1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 1. DC Current Gain 2N6517 200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 - 55C 30 20 25C TJ = 125C hFE , DC CURRENT GAIN 100 70 200 VCE = -10 V 2N6520 TJ = 125C 25C - 55C 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 2. DC Current Gain f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 2N6515, 2N6517 2N6519, 2N6520 100 70 50 TJ = 25C VCE = - 20 V f = 20 MHz 30 20 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 3. Current-Gain -- Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515, 2N6517 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 VCE(sat) @ IC/IB = 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C -1.4 -1.2 V, VOLTAGE (VOLTS) -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 - 50 - 70 -100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V TJ = 25C PNP 2N6519, 2N6520 Figure 4. "On" Voltages 2N6515, 2N6517 RV, TEMPERATURE COEFFICIENTS (mV/C) 2.0 1.5 1.0 0.5 0 RVC for VCE(sat) - 55C to 25C IC IB 2N6519, 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 -1.0 RVC for VCE(sat) - 55C to 125C RVB for VBE IC IB 2.5 + 10 25C to 125C + 10 25C to 125C - 55C to 25C - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 1.0 - 55C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 5. Temperature Coefficients 2N6515, 2N6517 100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb C, CAPACITANCE (pF) TJ = 25C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 - 0.2 2N6519, 2N6520 Ceb TJ = 25C Ccb Ccb 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 - 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515, 2N6517 1.0 k 700 500 300 200 t, TIME (ns) tr 100 70 50 30 20 10 1.0 t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25C 1.0 k 700 500 300 200 100 70 50 30 20 10 -1.0 tr PNP 2N6519, 2N6520 td @ VBE(off) = 2.0 V VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 7. Turn-On Time 2N6515, 2N6517 10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 2.0 k ts ts 1.0 k 700 500 300 200 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 -1.0 tf 2N6519, 2N6520 VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 8. Turn-Off Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 NPN 2N6515 2N6517 PNP 2N6519 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k +10.8 V 20 k 50 SAMPLING SCOPE APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 9. Switching Time Test Circuit r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 SINGLE PULSE 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 10. Thermal Response 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 1.0 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6519 2N6517, 2N6520 500 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms FIGURE A tP PP PP t1 1/f DUTY CYCLE 1 + t1 f + ttP 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP Figure 11. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN 2N6515 2N6517 PNP 2N6519 2N6520 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 NPN 2N6515 2N6517 PNP 2N6519 2N6520 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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